| Transistors - FETs, MOSFETs - Single |
| Online Catalog | N-Channel MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Supplier Device Package | PG-TSDSON-8-FL |
| PCN Design/Specification | OptiMOS Wafer Addition 17/Dec/2015 |
| Drain to Source Voltage (Vdss) | 30V |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Package / Case | 8-PowerTDFN |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | Infineon Technologies |
| Vgs (Max) | ±20V |
| Other Names | BSZ0901NSIATMA1CT BSZ0901NSICT BSZ0901NSICT-ND |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Schottky Diode (Body) |
| Datasheets | BSZ0901NSI |
| Categories | Discrete Semiconductor Products |
| Other Related Documents | Part Number Guide |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Standard Package | 1 |
| Series | OptiMOS™ |
| Featured Product | Data Processing Systems |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
