BSS123NH6433XTMA1 规格参数
Transistors - FETs, MOSFETs - Single | |
Online Catalog | N-Channel Logic Level Gate FETs |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 20.9pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 10V |
Supplier Device Package | PG-SOT23-3 |
Drain to Source Voltage (Vdss) | 100V |
Power Dissipation (Max) | 500mW (Ta) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Technology | MOSFET (Metal Oxide) |
Manufacturer | Infineon Technologies |