BSM300GA120DN2 规格参数
| Mounting Style | Screw |
| Configuration | Single |
| Gate-Emitter Leakage Current | 320 nA |
| Product | IGBT Silicon Modules |
| RoHS | No |
| Minimum Operating Temperature | - 40 C |
| Brand | Infineon Technologies |
| Power Dissipation | 2500 W |
| Package / Case | 62 mm |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Manufacturer | Infineon |