| Transistors - FETs, MOSFETs - Single |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Supplier Device Package | D-PAK (TO-252AA) |
| Drain to Source Voltage (Vdss) | 55V |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | Infineon Technologies |
| Vgs (Max) | ±20V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | AUIRFZ24NS,NL |
| Categories | Discrete Semiconductor Products |
| Other Related Documents | Part Number Guide |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Standard Package | 800 |
| Series | HEXFET® |
| Featured Product | Data Processing Systems |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
