| Typical Input Capacitance @ Vds (pF) | 1720@25V |
| Configuration | Single |
| Typical Turn-Off Delay Time (ns) | 40 |
| PCB changed | 2 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 61 |
| Maximum Power Dissipation (mW) | 91000 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 15 |
| Automotive | Yes |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Package | DPAK |
| Typical Fall Time (ns) | 35 |
| Process Technology | HEXFET |
| Package Height | 2.39(Max) |
| Channel Type | N |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 62 |
| Military | No |
| Maximum Drain Source Voltage (V) | 55 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 11@10V |
| Material | Si |
| Supplier Temperature Grade | Automotive |
| Package Length | 6.73(Max) |
| Typical Gate Charge @ 10V (nC) | 40 |
| AEC Qualified Number | AEC-Q101 |
| Standard Package Name | TO-252 |
| Pin Count | 3 |
| Mounting | Surface Mount |
| Tab | Tab |
| Part Status | Active |
| Product Category | Power MOSFET |
| Packaging | Tube |
| Package Width | 6.22(Max) |
| Typical Gate Charge @ Vgs (nC) | 40@10V |
