| Typical Input Capacitance @ Vds (pF) | 700@25V |
| Configuration | Single |
| Typical Turn-Off Delay Time (ns) | 100(Max) |
| PCB changed | 3 |
| HTS | 8541.21.00.95 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 100(Max) |
| Maximum Power Dissipation (mW) | 25000 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 50(Max) |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | TO-39 |
| Typical Fall Time (ns) | 80(Max) |
| Process Technology | HEXFET |
| Package Height | 4.54(Max) |
| Channel Type | P |
| EU RoHS | Not Compliant |
| Maximum Continuous Drain Current (A) | 4 |
| Diameter | 9.22(Max) |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 1680@10V |
| Supplier Temperature Grade | Military |
| Typical Gate Charge @ 10V (nC) | 34.8(Max) |
| Standard Package Name | TO-205-AF |
| Pin Count | 3 |
| Mounting | Through Hole |
| Lead Shape | Through Hole |
| Part Status | Active |
| Product Category | Power MOSFET |
| Typical Gate Charge @ Vgs (nC) | 34.8(Max)@10V |
