SDP8406-003 规格参数
| Maximum Dark Current | 100 nA |
| Collector-Emitter Breakdown Voltage | 30 V |
| Product | Phototransistors |
| Fall Time | 15 us |
| RoHS | Y |
| Minimum Operating Temperature | - 40 C |
| Wavelength | 880 nm |
| Brand | Honeywell |
| Type | Photodetector Transistors |
| Rise Time | 15 us |
| Package / Case | Side Looker |