| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| PCB changed | 2 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 70 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Supplier Package | T-1 |
| Phototransistor Type | Phototransistor |
| Package Height | 6.35(Max) |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Polarity | NPN |
| Lens Shape Type | Domed |
| EU RoHS | Compliant |
| Maximum Dark Current (nA) | 100 |
| Diameter | 3.94 |
| Maximum Rise Time (ns) | 15000(Typ) |
| Maximum Fall Time (ns) | 15000(Typ) |
| Material | Silicon |
| Standard Package Name | T-1 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Pin Count | 2 |
| Mounting | Through Hole |
| Type | Chip |
| Half Intensity Angle Degrees (°) | 20 |
| Viewing Orientation | Top View |
| Lead Shape | Through Hole |
| Peak Wavelength (nm) | 935 |
| Lens Color | Clear |
| Maximum Light Current (uA) | 920 |
