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GS66516T-E01-TY
GaN Systems

GS66516T-E01-TY

MOSFET 650V 60A E-Mode GaN Preproduction Units
中间价(CNY):-
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GS66516T-E01-TY 规格参数
Mounting StyleSMD/SMT
ConfigurationSingle
Id - Continuous Drain Current60 A
Vgs - Gate-Source Breakdown Voltage+/- 10 V
Transistor PolarityN-Channel
Channel ModeEnhancement
RoHS Y
Qg - Gate Charge13 nC
Minimum Operating Temperature- 55 C
Vds - Drain-Source Breakdown Voltage650 V
BrandGaN Systems