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GS61008P-E04-TY
GaN Systems

GS61008P-E04-TY

MOSFET 100V 90A E-Mode GaN Preproduction Units
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GS61008P-E04-TY 规格参数
Mounting StyleSMD/SMT
Id - Continuous Drain Current90 A
Vgs - Gate-Source Voltage+/- 10 V
Transistor PolarityN-Channel
Channel ModeEnhancement
RoHS Y
Qg - Gate Charge16 nC
Vds - Drain-Source Breakdown Voltage100 V
BrandGaN Systems
TechnologyGaN
ManufacturerGaN Systems