MRF8S21100HSR5 规格参数
| Maximum Drain Source Voltage (V) | 65 |
| Taxonomy | FET Transistors » RF MOSFET |
| Number of Elements per Chip | 1 |
| Typical Power Gain (dB) | 18.3 |
| Package Width (mm) | 9.91(Max) |
| Channel Mode | Enhancement |
| Standard Package Name | NI-780S |
| PCB | 3 |
| Minimum Operating Temperature (°C) | -65 |
| Pin Count | 3 |
| Maximum Operating Temperature (°C) | 225 |