FDN5618P 规格参数
| Typical Input Capacitance @ Vds (pF) | 430@30V |
| Category | Power MOSFET |
| Taxonomy | Diodes, Transistors and Thyristors > FET Transistors > MOSFET |
| Number of Elements per Chip | 1 |
| Package Width (mm) | 1.4 |
| Maximum Power Dissipation (mW) | 500 |
| Channel Mode | Enhancement |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | SuperSOT |
| Technology | TMOS |