FDG6301N 规格参数
| Typical Input Capacitance @ Vds (pF) | 9.5@10V |
| Category | Power MOSFET |
| Taxonomy | FET Transistors » MOSFET |
| Number of Elements per Chip | 2 |
| Package Width (mm) | 1.25 |
| Maximum Power Dissipation (mW) | 300 |
| Channel Mode | Enhancement |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | SC-70 |
| Technology | DMOS |