| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Assembly Site Transfer 06/Apr/2015 |
| Online Catalog | N-Channel MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2860pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Supplier Device Package | TO-3PN |
| PCN Design/Specification | Heat Sink Drawing Update 11/Feb/2014 |
| Drain to Source Voltage (Vdss) | 500V |
| Power Dissipation (Max) | 239W (Tc) |
| Package / Case | TO-3P-3, SC-65-3 |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | Tape and Box/Reel Barcode Update 07/Aug/2014 |
| Manufacturer | Fairchild/ON Semiconductor |
| Vgs (Max) | ±30V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | FDA18N50 |
| Categories | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 265 mOhm @ 9.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Standard Package | 30 |
| Series | UniFET™ |
| Packaging | Tube |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
