Fairchild Semiconductor

2N5551BU

2N5551BU , NPN 双极晶体管, 600 mA, Vce=160 V, HFE:80, 100 MHz, 3针 TO-92封装

中间价(CNY):0.2512

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2N5551BU 规格参数

Maximum Collector Base Voltage	180V
Product Height	5.33mm(Max)
Category	Bipolar Small Signal
Configuration	Single
Number of Elements per Chip	1
Pin_Count	3
Maximum Collector Emitter Saturation Voltage	[email protected] @10mA, [email protected] @50mA
Maximum Collector Emitter Voltage	160V
Minimum Operating Temperature	-55°C
Maximum Emitter Base Voltage	6V
Mounting	Through Hole
Supplier Package	TO-92
Type	NPN
Minimum DC Current Gain	[email protected] @5V, [email protected] @5V, [email protected] @5V
Maximum DC Collector Current	0.6A
Product Type	GP BJT
Maximum Power Dissipation	625mW
Packaging	Bulk
Family	2N5551
Product Length	5.2mm(Max)
Maximum Operating Frequency	300MHz
Maximum Operating Temperature	150°C
Maximum Base Emitter Saturation Voltage	[email protected] @10mA, [email protected] @50mA
Product Width	4.19mm(Max)

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