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4N35M-V
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4N35M-V

The 4N35 device consists of an infrared emitting diode, optically coupled to a phototransistor. The device is packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
中间价(CNY):1.3658
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4N35M-V 规格参数
Number of Channels per Chip1
Minimum Isolation Voltage (Vrms)5000
PCB changed6
Output TypeDC
Maximum Collector-Emitter Voltage (V)30
ECCN (US)EAR99
Current Transfer Ratio Test Current (mA)10
StandardCSA|NEMKO|FIMKO|CQC|VDE|UL|SEMKO|DEMKO
Maximum Power Dissipation (mW)250
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)100