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NE3509M04-A
CEL

NE3509M04-A

RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
中间价(CNY):-
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NE3509M04-A 规格参数
Mounting StyleSMD/SMT
Gate-Source Cutoff Voltage- 0.5 V
Vgs - Gate-Source Breakdown Voltage- 3 V
Id - Continuous Drain Current60 mA
Transistor PolarityN-Channel
RoHS Y
BrandCEL
Vds - Drain-Source Breakdown Voltage4 V
Transistor TypeHFET
Package / CaseFTSMM-4 (M04)
TechnologyGaAs